In general, MOSFETs commonly used for high-end driving require a gate voltage greater than the source voltage when conducting. However, for high-end driving MOSFETs, the source voltage and drain voltage (VCC) are the same when conducting, so the gate voltage should be 4V or 10V higher than VCC
Thyristor, also known as silicon controlled rectifier (SCR), is a high-power semiconductor device composed of three PN structures. In terms of performance, thyristors not only have unidirectional conductivity, but also possess more valuable controllability than silicon rectifier components, with only two states: on and off.
Unidirectional thyristor (SCR) is a semiconductor device and the earliest type of thyristor. It consists of four semiconductor regions with three electrodes: anode, cathode, and control electrode. Unidirectional thyristors have unidirectional conductivity and can only flow from the anode to the cathode, with very little reverse current. Meanwhile, unidirectional thyristors have controllability and can control their conduction state through signals from the control electrode, making them widely u
Method for distinguishing the positive and negative poles of T-shaped surface mounted light-emitting diodes
Thyristor, also known as thyristor, is the abbreviation for semiconductor thyristor. Thyristor is a high-power PNPN type 4-layer 3-terminal component that can convert alternating current into pulsating direct current with adjustable voltage, as well as direct current into alternating current. It can also adjust the alternating current voltage and make contactless switches. Thyristors are widely used in controllable rectification, speed regulation of DC motors, and electroplating industries.
Judgment of the quality of high-power thyristors
